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data sheet 1 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! description the ptfa041501gl and PTFA041501HL are 150-watt ldmos fets designed for ultra-linear cdma power amplifier applications. they are available in thermally-enhanced plastic open-cavity packages with copper flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptfa041501gl package pg-63248-2 thermally-enhanced high power rf ldmos fets 150 w, 420 ? 500 mhz rf characteristics single-carrier cdma is-95 measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 900 ma, p out = 60 w average, ? = 470 mhz characteristic symbol min typ max unit gain g ps ? 21 ? db drain efficiency h d ? 41 ? % adjacent channel power ratio acpr ? ?33 ? db PTFA041501HL package pg-64248-2 features ? thermally-enhanced plastic open-cavity (epoc?) packages with copper flanges, pb-free and rohs- compliant ? broadband internal matching ? typical cdma performance at 470 mhz, 28 v - average output power = 60 w - linear gain = 21 db - efficiency = 41% ? typical cw performance, 470 mhz, 28 v - output power at p?1db = 175 w - efficiency = 62% ? integrated esd protection: human body model, class 1 (minimum) ? excellent thermal stability ? low hci drift ? capable of handling 10:1 vswr @ 28 v, 150?w?(cw) output power single-carrier cdma is-95 performance v dd = 28 v, i dq = 900 ma, ? = 470 mhz -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 36 38 40 42 44 46 48 average output power (dbm) 0 5 10 15 20 25 30 35 40 45 drain efficiency (%) adjacent channel power ratio (db) efficiency acpr ?15c 25c 90c alt *see infineon distributor for future availability.
data sheet 2 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 900 ma, p out = 150 w pep, ? = 470 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 20.0 21.0 ? db drain efficiency h d 45.0 46.5 ? % intermodulation distortion imd ? ?29 ?28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.07 ? w operating gate voltage v ds = 28 v, i dq = 900 ma v gs 2 2.48 3 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 625 w above 25c derate by 3.57 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 150 w cw, soldered) r q jc 0.28 c/w *see infineon distributor for future availability. ordering information t ype and version package type package description shipping marking ptfa041501gl v1 pg-63248-2 thermally-enhanced slotted flange, tray ptfa041501gl single-ended PTFA041501HL v1 pg-64248-2 thermally-enhanced slotted flange, tray PTFA041501HL single-ended
data sheet 3 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution power sweep at selected i dq v dd = 28 v, ? = 470 mhz 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 39 41 43 45 47 49 51 53 55 output power (dbm) gain (db) i dq = 1125 ma i dq = 900 ma i dq = 675 ma broadband circuit performance v dd = 28 v, i dq = 900 ma, p out = 80 w 15 20 25 30 35 40 45 50 460 462 464 466 468 470 frequency (mhz) gain (db), efficiency (%) -20 -19 -18 -17 -16 -15 -14 -13 input return loss (db) gain efficiency return loss typical performance (data taken in a production ) power sweep, cw conditions v dd = 28 v, i dq = 900 ma, ? = 470 mhz 15 16 17 18 19 20 21 22 39 41 43 45 47 49 51 53 55 output power (dbm) gain (db) 10 20 30 40 50 60 70 80 drain efficiency (%) gain efficiency t case = 25c t case = 90c p out , gain & efficiency (at p-1db) vs. frequency v dd = 28 v, i dq = 900 ma 15 20 25 30 35 40 45 50 55 60 65 460 462 464 466 468 470 frequency (mhz) 19.9 20 20.1 20.2 20.3 20.4 20.5 20.6 20.7 20.8 20.9 gain (db) gain efficiency output power efficiency (%), output power (dbm)
data sheet 4 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution output power (at 1 db compression) vs. supply voltage i dq = 900 ma, ? = 470 mhz 50 51 52 53 54 55 24 26 28 30 32 supply voltage (v) output power (dbm) typical performance (cont.) intermodulation distortion vs. output power v dd = 28 v, i dq = 900 ma, ? 1 = 469 mhz, ? 2 = 470 mhz -70 -60 -50 -40 -30 -20 -10 0 36 38 40 42 44 46 48 50 output power (dbm), avg. 10 15 20 25 30 35 40 45 50 drain efficiency (%) im5 im7 intermodulation distortion (dbc) im3 efficiency im3 vs. output power at selected biases v dd = 28 v , ? 1 = 469 mhz, ? 2 = 470 mhz -43 -41 -39 -37 -35 -33 -31 -29 -27 -25 36 38 40 42 44 46 48 50 output power (dbm) imd (dbc) 675 ma 900 ma 1125 ma bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.29 a 0.88 a 1.47 a 2.20 a 4.41 a 6.61 a 8.81 a 11.02 a
data sheet 5 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 450 0.88 ?3.20 1.33 0.22 455 0.84 ?3.20 1.35 0.31 460 0.84 ?3.10 1.40 0.38 465 0.84 ?3.00 1.41 0.47 470 0.83 ?2.90 1.44 0.57 0.1 0.2 0 . 1 0 . 1 - w a v e l e n g t h s t o w a r d g < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 450 mhz 470 mhz z load z source 450 mhz 470 mhz see next page for circuit information z 0 = 50 w
data sheet 6 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution reference circuit schematic for ? = 460 mhz circuit assembly information dut ptfa041501gl or PTFA041501HL ldmos transistor pcb 0.76 mm [.030"] thick, e r = 9.2 rogers tmm10 2 oz. copper microstrip electrical characteristics at 460 mhz 1 dimensions l x w (mm) dimensions l x w (in.) l 1 0.016 l, 50.69 w 4.32 x 0.71 0.170 x 0.028 l 2 0.058 l, 24.34 w 14.22 x 2.54 0.560 x 0.100 l 3 0.097 l, 4.85 w 21.59 x 17.78 0.850 x 0.700 l 4 0.081 l, 50.69 w 21.59 x 0.71 0.850 x 0.280 l 5 0.040 l, 4.85 w 8.89 x 17.78 0.350 x 0.700 l 6 0.158 l, 37.73 w 40.64 x 1.27 1.600 x 0.050 l 7 0.030 l, 10.94 w 5.59 x 7.11 0.220 x 0.280 l 8 0.158 l, 37.73 w 40.64 x 1.27 1.600 x 0.050 l 9 0.030 l, 10.94 w 5.59 x 7.11 0.220 x 0.280 l 10 0.025 l, 5.58 w 5.59 x 15.24 0.220 x 0.600 l 11 0.105 l, 5.58 w 23.62 x 15.24 0.930 x 0.600 l 12 0.006 l, 5.58 w 1.27 x 15.24 0.050 x 0.600 l 13 0.104 l, 21.37 w 25.4 x 3.05 1.000 x 0.120 l 14 0.014 l, 50.69 w 3.81 x 0.71 0.150 x 0.028 reference circuit j2 v dd l1 r2 1.3k v r6 1.2k v r3 2k v r4 2k v r5 3.3k v l 1 l 6 l 8 dut j1 l 4 l 2 c4 10f 35v l 3 l 5 l 7 l 9 l 10 l 11 l 12 l 13 l 14 c5 0.1f r7 5.1k v c6 120pf c11 1f c12 10f 50v c13 0.1f 50v c10 100pf c14 10f 50v r6 10 v c7 100pf c8 11pf c9 4.3pf c20 5.6pf c22 11pf c21 5.1pf c23 11pf c25 100pf c24 8.2pf l2 c16 1f c17 10f 50v c18 0.1f 50v c15 100pf c19 10f 50v c3 0.001f c2 0.001f q1 bcp56 qq1 lm7805 c1 0.001f v dd v66000-g9267-d631-01-7606.dwg
data sheet 7 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution r4 q1 qq1 c3 c1 r1 c2 r2 r6 r7 r5 r3 gnd vdd c4 r6 r7 c5 c9 c8 c7 c11 c13 c6 c16 c15 c10 c22 c20 c21 c23 c24 c25 c18 c14 c12 c17 c19 041501in_03 041501out_03 l2 l1 rf in rf out v66100-g9267-d631-01-7631.dwg reference circuit (cont.) reference circuit assembly diagram (not to scale). gerber files for this circuit available on request. r6 r7 c5 c4 c3 c2 r1 r6 r7 r3 r2 q1 c8 r5 r4 c1 qq1
data sheet 8 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution reference circuit (cont.) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5, c13, c18 capacitor, 0.1 f digi-key p4525-nd c6 ceramic capacitor, 120 pf atc 100b 121 c7, c10, c15, c25 ceramic capacitor, 100 pf atc 100b 101 c8, c22, c23 ceramic capacitor, 11 pf atc 100b 110 c9 ceramic capacitor, 4.3 pf atc 100b 4r3 c11, c16 capacitor, 1.0 f atc 920c105 c12, c14, c17, c19 capacitor, 10 f, 50 v garrett electronics tps106k050r0400 c20 ceramic capacitor, 5.6 pf atc 100b 5r6 c21 ceramic capacitor, 5.1 pf atc 100b 5r1 c24 ceramic capacitor, 8.2 pf atc 100b 8r2 l1, l2 ferrite, 6 mm ferroxcube 53/3/4.6-452 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2k ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3k ohms digi-key p1.3kgct-nd r3 chip resistor, 2k ohms digi-key p2.0kect-nd r4 potentiometer, 2k ohms digi-key 3224w-202etr-nd r5 chip resistor, 3.3k ohms digi-key p3.3kect-nd r6 chip resistor, 10 ohms digi-key p10ect-nd r7 chip resistor, 5.1k ohms digi-key p5.1kect-nd
data sheet 9 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution package outline specifications package pg-63248-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. gold plating thickness: < 0.254 micron [< 10 microinch] 5. lead thickness: 0.10 + 0.051/?0.025 mm [.004 +0.002/?0.001 inch]. 6. tabs may protrude 0.13 [.005] max from body. 7. pins: d = drain, s = source, g = gate. c l 0.064 (.0025) ?a? c l 4.830.51 [.190.020] c l pg-63248-2(g)_po_8-28-08 20.27 [.798] 34.04 0.08 [1.340 .003] 3x r0.51 +1.14 ?0.25 [r.020 ] +.045 ?.010 45 x 2.72 [45 x .107] 45 x 1.78 [45 x .070] 6. 2x r1.63 [r.064] 9.78 0.08 [.385 .003] 3.63 +0.25 ?0.13 [.143 ] +.010 ?.005
data sheet 10 of 11 rev. 03, 2009-04-21 ptfa041501gl PTFA041501HL confidential, limited internal distribution pg-64248-2(h)_po_11-12-08 9.78 0.08 [.385 .003] 20.57 0.08 [.810 .003] package outline specifications (cont.) package pg-64248-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. gold plating thickness: < 0.254 micron [< 10 microinch] 5. lead thickness: 0.10 + 0.051/?0.025 mm [.004 +0.002/?0.001 inch]. 6. tabs may protrude 0.13 [.005] max from body. 7. pins: d = drain, s = source, g = gate. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 11 of 11 rev. 03, 2009-04-21 ptfa041501ghl v1 confidential, limited internal distribution revision history: 2009-04-21 data sheet previous version: 2008-11-21, data sheet page subjects (major changes since last revision) 9, 10 clarify package information goldmos ? is a registered trademark of infineon technologies ag. edition 2009-04-21 published by infineon technologies ag 81726 munich , germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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